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 RB520S30_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 5 of 12 NXP Semiconductors RB520S30 200 mA low VF MEGA Schottky barrier recti?er 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Table 7. Characteristics Tj =25°C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF= 0.1 mA - 190 220 mV IF= 1 mA - 250 290 mV IF= 10 mA - 320 360 mV IF= 100 mA - 440 500 mV IF= 200 mA - 520 600 mV IR reverse current VR=10V --1μA Cd diode capacitancef = 1 MHz; VR=1V - - 20 pF (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj =85°C (4) Tj=25°C (5) Tj=?40°C (1) Tj= 125°C (2) Tj=85°C (3) Tj=25°C (4) Tj=?40°C Fig 3. Forward current as a function of forward voltage; typical values Fig 4. Reverse current as a function of reverse voltage; typical values 006aab702 10?3 10?2 10?1 1 IF (A) 10?4 VF (V) 0.0 0.80.2 0.4 0.6 (1) (2) (3) (4) (5) 006aab703 VR (V) 03010 20 10?6 10?8 10?7 10?4 10?5 10?3 IR (A) 10?9 (1) (2) (3) (4) |